SJ/T 11488-2015: Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals

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Scope

This standard specifies the methods for measuring resistivity, hall coefficient and
determining hall mobility in semi-insulating GaAs single crystals.
This standard applies to the measurement of electrical parameters of semi-insulating
GaAs single crystals, which have a resistivity in the range of 104 Ω•cm ~ 109 Ω•cm.

Basic Data

Standard ID	SJ/T 11488-2015 (SJ/T11488-2015)
Description (Translated English)	Test method for measuring resistivity, hall coefficient and determining hall mobility in semi-insulating GaAs single crystals
Sector / Industry	Electronics Industry Standard (Recommended)
Classification of Chinese Standard	H83
Classification of International Standard	29.045
Word Count Estimation	8,868
Date of Issue	2015-04-30
Date of Implementation	2015-10-01
Quoted Standard	GB/T 4326; GB/T 14264
Regulation (derived from)	Ministry of Industry and Information Technology Announcement (2015 No. 28)
Issuing agency(ies)	Ministry of Industry and Information Technology
Summary	This Standard specifies the semi-insulating gallium arsenide single crystal resistivity, Hall coefficient and Hall measurements mobility. This Standard applies to 10 ^ 4�� �� cm ~ 10 ^ measuring electrical parameters of single crystal material resistivity in 9�� �� cm range of semi-insulating gallium arsenide.