GB/T 31854-2015: Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry

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Scope

This standard specifies a method for the determination of trace metal impurities
in silicon materials for photovoltaic applications by inductively coupled plasma
mass spectrometry (ICP-MS).
This standard applies to the determination of trace metal impurities of iron,
chromium, nickel, copper, zinc in silicon materials for photovoltaic applications.
The measurement range of each element is as shown in Table 1.

Basic Data

Standard ID	GB/T 31854-2015 (GB/T31854-2015)
Description (Translated English)	Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
Sector / Industry	National Standard (Recommended)
Classification of Chinese Standard	H82
Classification of International Standard	29.045
Word Count Estimation	8,871
Date of Issue	2015-07-03
Date of Implementation	2016-03-01
Quoted Standard	GB/T 25915.1-2010
Regulation (derived from)	National Standard Announcement 2015 No.22
Issuing agency(ies)	General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary	This Standard specifies the use of inductively coupled plasma mass spectrometry (ICP-MS) was measured with a silicon photovoltaic cell of trace metal impurities approach. This Standard applies to the determination of silicon photovoltaic cell material of trace metal impurities of iron, chromium, nickel, copper, zinc content.