GB/T 30655-2014: Test methods for internal quantum efficiency of nitride LED epitaxial layers

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Scope

This Standard specifies the test method for the internal quantum efficiency of III-V nitride LED
epitaxial layers.
This Standard is applicable to the test of the internal quantum efficiency of quantum well LEDs
based on III-V nitrides.

Basic Data

Standard ID	GB/T 30655-2014 (GB/T30655-2014)
Description (Translated English)	Test methods for internal quantum efficiency of nitride LED epitaxial layers
Sector / Industry	National Standard (Recommended)
Classification of Chinese Standard	H21
Classification of International Standard	77.040.99
Word Count Estimation	10,151
Date of Issue	12/31/2014
Date of Implementation	9/1/2015
Quoted Standard	GB/T 6379
Regulation (derived from)	National Standards Bulletin 2014 No. 33
Issuing agency(ies)	General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary	This Standard specifies the test methods within ��-V nitride quantum efficiency of LED epitaxial wafers. This Standard applies to based on ��-V nitride quantum wells within the test LED quantum efficiency.