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GB/T 15909-2017 English PDF (GB/T15909-2017)

GB/T 15909-2017 English PDF (GB/T15909-2017)

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GB/T 15909-2017: Gas for electronic industry - Silane

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Scope

This Standard specifies the technical requirements, test methods, marking, packaging,
storage, transportation and safety of silane gas.
This Standard applies to saline for electronic industry prepared by magnesium silicide
method, reduction of silicon tetrafluoride by sodium aluminum hydride, and
chlorosilane disproportionation process. It is mainly used for the production of high-
purity polysilicon, low-temperature chemical vapor deposition of silicon dioxide,
chemical vapor deposition of silicon nitride, polysilicon isolation layer, polysilicon
ohmic contact layer and heterogeneous or homogeneous silicon epitaxial growth raw
materials, ion implantation source and laser medium, etc.; it can also be used for the
production of solar cells, optical fibers and photoelectric sensors.
Molecular formula: SiH4.
Relative molecular mass: 32.117 (according to the international relative atomic mass in
2011);

Basic Data

Standard ID GB/T 15909-2017 (GB/T15909-2017)
Description (Translated English) Gas for electronic industry - Silane
Sector / Industry National Standard (Recommended)
Classification of Chinese Standard G86
Classification of International Standard 71.100.20
Word Count Estimation 11,137
Date of Issue 2017-05-31
Date of Implementation 2017-12-01
Older Standard (superseded by this standard) GB/T 15909-2009
Quoted Standard GB 190; GB/T 3723; GB/T 5099; GB/T 5832.1; GB/T 7144; GB/T 11446.1; GB/T 14193; GB 15258; GB/T 16804; GB/T 26571; GB/T 28726; TSG R0006
Issuing agency(ies) General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China
Summary This standard specifies the technical requirements, test methods, marking, packaging, storage and safety of silane gases. This standard applies to the magnesium silicate method, sodium aluminum hydride reduction of silicon tetrafluoride method, chlorosilane disproportionation process preparation of the electronics industry with silane. It is mainly used for the production of high purity polysilicon, low temperature chemical vapor deposition of silicon dioxide, silicon nitride chemical vapor deposition, polysilicon isolation layer, polysilicon ohmic contact layer and heterogeneous or homogeneous silicon epitaxial growth of raw materials and ion implantation and Laser media, etc., can also be used for the production of solar cells, optical fiber and photoelectric sensors.


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