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GB/T 15909-2017 English PDF (GB/T15909-2017)
GB/T 15909-2017 English PDF (GB/T15909-2017)
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GB/T 15909-2017: Gas for electronic industry - Silane
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Scope
This Standard specifies the technical requirements, test methods, marking, packaging,storage, transportation and safety of silane gas.
This Standard applies to saline for electronic industry prepared by magnesium silicide
method, reduction of silicon tetrafluoride by sodium aluminum hydride, and
chlorosilane disproportionation process. It is mainly used for the production of high-
purity polysilicon, low-temperature chemical vapor deposition of silicon dioxide,
chemical vapor deposition of silicon nitride, polysilicon isolation layer, polysilicon
ohmic contact layer and heterogeneous or homogeneous silicon epitaxial growth raw
materials, ion implantation source and laser medium, etc.; it can also be used for the
production of solar cells, optical fibers and photoelectric sensors.
Molecular formula: SiH4.
Relative molecular mass: 32.117 (according to the international relative atomic mass in
2011);
Basic Data
Standard ID | GB/T 15909-2017 (GB/T15909-2017) |
Description (Translated English) | Gas for electronic industry - Silane |
Sector / Industry | National Standard (Recommended) |
Classification of Chinese Standard | G86 |
Classification of International Standard | 71.100.20 |
Word Count Estimation | 11,137 |
Date of Issue | 2017-05-31 |
Date of Implementation | 2017-12-01 |
Older Standard (superseded by this standard) | GB/T 15909-2009 |
Quoted Standard | GB 190; GB/T 3723; GB/T 5099; GB/T 5832.1; GB/T 7144; GB/T 11446.1; GB/T 14193; GB 15258; GB/T 16804; GB/T 26571; GB/T 28726; TSG R0006 |
Issuing agency(ies) | General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China |
Summary | This standard specifies the technical requirements, test methods, marking, packaging, storage and safety of silane gases. This standard applies to the magnesium silicate method, sodium aluminum hydride reduction of silicon tetrafluoride method, chlorosilane disproportionation process preparation of the electronics industry with silane. It is mainly used for the production of high purity polysilicon, low temperature chemical vapor deposition of silicon dioxide, silicon nitride chemical vapor deposition, polysilicon isolation layer, polysilicon ohmic contact layer and heterogeneous or homogeneous silicon epitaxial growth of raw materials and ion implantation and Laser media, etc., can also be used for the production of solar cells, optical fiber and photoelectric sensors. |
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