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GB/T 12963-2014 English PDF (GBT12963-2014)

GB/T 12963-2014 English PDF (GBT12963-2014)

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GB/T 12963-2014: Electronic-grade polycrystalline silicon

This Standard specifies polycrystalline silicon requirements, test methods, inspection rules, mark, transportation, storage, quality certificate and order list. This Standard is applicable to the polycrystalline silicon which is manufactured from chlorosilane and silane.
GB/T 12963-2014
GB
NATIONAL STANDARD OF THE
PEOPLE REPUBLIC OF CHINA
ICS 29.045
H 82
Replacing GB/T 12963-2009
Electronic-grade Polycrystalline Silicon
ISSUED ON. DECEMBER 31, 2014
IMPLEMENTED ON. SEPTEMBER 1, 2015
Issued by.
General Administration of Quality Supervision, Inspection
and Quarantine of the PEOPLE Republic of China;
Standardization Administration of the PEOPLE Republic of
China.
Table of Contents
Foreword ... 3
1 Scope ... 4
2 Normative references ... 4
3 Terms and definitions ... 5
4 Requirements ... 5
5 Testing Method ... 7
6 Inspection Rules ... 8
7 Mark, Package, Transportation and Storage ... 9
8 Content of Order List (or Contract) ... 10
Foreword
This Standard was drafted in accordance with the rules given in GB/T 1.1-2009. This Standard replaces GB/T 12963-2009 "Polycrystalline silicon". Compared with GB/T 12963-2009, the main changes of this Standard are as follows.
- Add the reference national standards GB/T 1551, GB/T 1557, GB/T 24574, GB/T 24581 and GB/T 24582 (see Chapter 2);
- Add polycrystalline silicon?€?s technical parameters, including the requirements of donor impurity concentration, acceptor impurity concentration, oxygen concentration, substrate metal impurity concentration, surface metal impurity concentration (see Table 1);
- For different grade of polycrystalline silicon, the carbon concentration is revised FROM < 1.5 ?? 1015 atoms / cm3, < 2 ?? 1016 atoms/cm3, < 2 ?? 1016 atoms/cm3 TO < 4.0 ?? 1016 atoms/cm3, < 1.0 ?? 1016 atoms/cm3, < 1.5 ?? 1016 atoms/cm3 respectively (see Table 1).
Please note that some of the content of this document may involve patents. The issuing agency of this document do not undertake the responsibility to identify these patents. This Standard was jointly proposed by and shall be under the jurisdiction of National Standardization Technical Committee of Semiconductor Equipment and Materials (SAC/TC 203) AND National Standardization Technical Committee of Semiconductor Equipment and Materials ?€? Material Sub-committee (SAC/TC 203/SC 2).
Drafting organizations of this Standard. Emei Semiconductor Materials Research Institute, Sichuan Xinguang Silicon Technology Co., Ltd., Youyan Semiconductor Materials Co., Ltd., Jiangsu Zhongneng Silicon Technology Development Co., Ltd., Xinte Energy Co., Ltd. AND Luoyang Sino-silicon High-tech Co,. Ltd.
The drafters of this Standard. Zhan Ke, Yang, Zhong Na, Li Yawen, Liang Hong, Sun Yan, Liu Xiaoxia, Yin Bo, Gan Xinye and Yan Dazhou.
The previous editions replaced by this Standard are as follows.
- GB/T 12963-1991, GB/T 12963-1996, GB/T 12963-2009.
Specification for Polycrystalline Silicon
1 Scope
This Standard specifies polycrystalline silicon?€?s requirements, test methods, inspection rules, mark, transportation, storage, quality certificate and order list (or contract).
This Standard is applicable to the polycrystalline silicon which is manufactured from chlorosilane and silane.
2 Normative references
The following documents contain provisions which, through reference in this text, constitute the provisions of this Standard. For dated reference, the subsequent amendments (excluding corrigendum) or revisions of these publications do not apply. For undated references, the latest edition of the normative document is applicable to this Standard.
GB/T 1550 Standard methods for measuring conductivity type of extrinsic semiconducting materials
GB/T 1551 Test method for measuring resistivity of monocrystal silicon
GB/T 1553 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconductivity decay
GB/T 1557 The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 1558 Test method for substitutional atomic carbon content of silicon by infrared absorption
GB/T 4059 Polycrystalline silicon - Examination method - Zone-melting on phosphorus under controlled atmosphere
GB/T 4060 Polycrystalline silicon - Examination method - Vacuum zone-melting on boron
GB/T 4061 Polycrystalline silicon - Examination method - Assessment of
sandwiches on cross-section by chemical corrosion
GB/T 13389 Practice for conversion between resistivity and dopant density for determined by the negotiation of the supplier and purchaser.
6.5 Determination of inspection result
6.5.1 The grade of polycrystalline silicon shall be determined by donor impurity concentration, acceptor impurity concentration, carbon concentration, oxygen concentration, surface metal impurity concentration and substrate metal impurity concentration. If one item of the inspection results is unqualified, then the doubling sampling is required to be carried out for the re-inspection of the unqualified item(s). If it is still unqualified, then this batch of products are deemed as unqualified. 6.5.2 The determination of inspection result of conduction type, minority carrier lifetime, resistivity, dimension and allowable deviation, structure and appearance quality shall be determined by negotiation of the supplier and purchaser. 7 Mark, Package, Transportation and Storage
7.1 Mark
The wordings or marks such as "Handle with Care", "Keep Away From Corrosion, Keep Away from Moisture" shall be marked on the packing box, and indicate. a) Purchaser?€?s name;
b) Product name, designation;
c) Number of packages and net weight of the product;
d) Supplier?€?s name.
7.2 Packaging
The polycrystalline silicon shall be packed into a clean polyethylene packaging bag after it is cleaned and dried in a certain way; then the packaging bag shall be packed into a packing box. It is required to protect the polyethylene packaging bag from breakage while packing, so as to avoid the foreign contamination to the product; the good protection shall be provided in an optimal placing way. The packing of polycrystalline silicon can also be negotiated by the supplier and purchaser. 7.3 Transport
The product shall be loaded and unloaded carefully during the transport process; do not press and shove it, and adopt the vibration-proof measures.
7.4 Storage
The product shall be stored in a clean and dry environment.
7.5 Quality certificate
Each batch of product shall be accompanied by a quality certificate, and noted with. a) Supplier?€?s name;
b) Product name and designation;
c) Product batch number;
d) The gross weight and net weight of product;
e) Stamps of each-item inspection result and inspection department;
f) Serial number of this Standard;
g) Date of exit-factory.
8 Content of Order List (or Contract)
The following contents shall be included in the order list of specified products in this Standard.
a) Product name and designation;
b) Serial number of this Standard;
c) The content negotiated by the supplier and purchaser in this Standard; d) Other.

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