Passer aux informations produits
1 de 7

PayPal, credit cards. Download editable-PDF and invoice in 1 second!

GB/T 25074-2017 English PDF (GBT25074-2017)

GB/T 25074-2017 English PDF (GBT25074-2017)

Prix habituel $80.00 USD
Prix habituel Prix promotionnel $80.00 USD
Promotion Épuisé
Frais d'expédition calculés à l'étape de paiement.
Delivery: 3 seconds. Download true-PDF + Invoice.
Get QUOTATION in 1-minute: Click GB/T 25074-2017
Historical versions: GB/T 25074-2017
Preview True-PDF (Reload/Scroll if blank)

GB/T 25074-2017: Solar-grade polycrystalline silicon
GB/T 25074-2017
GB
NATIONAL STANDARD OF THE
PEOPLE’S REPUBLIC OF CHINA
ICS 29.045
H 82
Replacing GB/T 25074-2010
Solar-grade polycrystalline silicon
太阳能级多晶硅
ISSUED ON: NOVEMBER 1, 2017
IMPLEMENTED ON: MAY 1, 2018
Issued by: General Administration of Quality Supervision, Inspection and
Quarantine of PRC;
Standardization Administration of PRC.
Table of Contents
Foreword ... 3
1 Scope ... 5
2 Normative references ... 5
3 Terms and definitions ... 6
4 Grade and classification ... 6
5 Requirements ... 7
6 Test method ... 8
7 Inspection rules ... 9
8 Marking, packaging, transportation, storage, and quality certificate ... 10
9 Contents of order form (or contract) ... 11
Appendix A (Informative) Reference technical indexes of solar-grade polycrystalline
silicon ... 13
Solar-grade polycrystalline silicon
1 Scope
This standard specifies the terms and definitions, grades and classifications,
requirements, test methods, inspection rules, marking, packaging, transportation,
storage, and quality certificates of solar-grade polycrystalline silicon.
This standard applies to rod-shaped polycrystalline silicon grown from chlorosilane and
silane or polycrystalline silicon blocks formed by crushing.
2 Normative references
The following documents are essential to the application of this document. For the dated
referenced documents, only the versions with the indicated dates are applicable to this
document; for the undated referenced documents, only the latest version (including all
the amendments) is applicable to this document.
GB/T 1550 Test methods for conductivity type of extrinsic semiconducting
materials
GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line
four-point probe and direct current two-point probe method
GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and
germanium - Photoconductivity decay method
GB/T 1557 Test method for determining interstitial oxygen content in silicon by
infrared absorption
GB/T 1558 Test method for substitutional atomic carbon content of silicon by
infrared absorption
GB/T 4059 Test method for phosphorus content in polycrystalline silicon by zone-
melting method under controlled atmosphere
GB/T 4060 Test method for boron content in polycrystalline silicon by vacuum
zone-melting method
GB/T 13389 Practice for conversion between resistivity and dopant density for
boron-doped, phosphorus-doped, and arsenic-doped silicon
GB/T 14264 Semiconductor materials - Terms and definitions
GB/T 14844 Designations of semiconductor materials
GB/T 24574 Test methods for photoluminescence analysis of single crystal silicon
for III-V impurities
GB/T 24581 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon -
Low temperature FT-IR analysis method
GB/T 24582 Test method for measuring surface metal impurity content of
polycrystalline silicon - Acid extraction-inductively coupled plasma mass
spectrometry method
GB/T 29057 Practice for evaluation of polycrystalline silicon rods by float-zone
crystal growth and spectroscopy
GB/T 29849 Test method for measuring surface metallic contamination of silicon
materials used for photovoltaic applications by inductively coupled plasma mass
spectrometry
GB/T 31854 Test method for measuring metallic impurities content in silicon
materials used for photovoltaic applications by inductively coupled plasma mass
spectrometry
3 Terms and definitions
The terms and definitions defined in GB/T 14264 apply to this document.
4 Grade and classification
4.1 Grade
The grades of solar-grade polycrystalline silicon products shall meet the requirements
of GB/T 14844.
4.2 Classification
Solar-grade polycrystalline silicon is divided into block and rod according to the shape,
divided into N-type and P-type according to the conductivity type, and divided into four
grades according to the difference in technical indexes.
5.3 Surface quality
5.3.1 No-need-to-cleaning or after-cleaning polycrystalline silicon shall meet the
requirements for direct use. The classification requirements for the surface quality of
polycrystalline silicon are generally as follows:
a) Dense polysilicon: The depth of surface particle dimples is less than 5 mm, the
cross-sectional structure is dense, the appearance has no abnormal color, and
there is no oxidized interlayer;
b) Popcorn polysilicon: The depth of surface particle dimples is 5 mm~20 mm,
the appearance has no abnormal color, and there is no oxidized interlayer;
c) Coral polysilicon: The cross-sectional structure is loose, the depth of surface
particle dimple is ≥20 mm, the appearance has no abnormal color, and there is
no oxidized interlayer.
5.3.2 Other classification requirements for the surface quality of polycrystalline silicon
shall be agreed upon between the supplier and the purchaser.
6 Test method
6.1 Before the test of donor impurity concentration, acceptor impurity concentration,
oxygen concentration, carbon concentration, minority carrier lifetime, conductivity
type, and resistivity of polycrystalline silicon, single crystal samples are required to be
prepared according to the methods specified in GB/T 4059, GB/T 4060 or GB/T 29057.
6.2 The determination of donor impurity concentration and acceptor impurity
concentration in polycrystalline silicon shall be carried out according to the provisions
of GB/T 24574 or GB/T 24581, or converted according to the methods specified in
GB/T 1551 and GB/T 13389. Arbitration inspection shall be carried out in accordance
with the provisions of GB/T 24581.
6.3 The determination of oxygen concentration in polycrystalline silicon shall be carried
out according to the provisions of GB/T 1557.
6.4 The determination of carbon concentration in polycrystalline silicon shall be carried
out according to the provisions of GB/T 1558.
6.5 The determination of minority carrier lifetime in polycrystalline silicon shall be
carried out according to the provisions of GB/T 1553.
6.6 The determination of the metal impurity content of the polycrystalline silicon matrix
shall be carried out in accordance with the provisions of GB/T 31854.
6.7 The determination of the metal impurity content on the surface of polycrystalline
silicon shall be carried out according to the provisions of GB/T 24582 or GB/T 29849.
Arbitration inspection shall be carried out according to the provisions of GB/T 29849.
6.8 The inspection of the conductivity type of polycrystalline silicon shall be carried
out according to the provisions of GB/T 1550.
6.9 The determination of the resistivity of polycrystalline silicon shall be carried out
according to the provisions of GB/T 1551.
6.10 The dimension distribution range of polycrystalline silicon blocks shall be
inspected by sieving, or by a method agreed upon by the supplier and the purchaser.
The dimensions of the rod-shaped polycrystalline silicon are measured with a
measuring tool of corresponding precision.
6.11 The surface quality of polycrystalline silicon is inspected visually.
7 Inspection rules
7.1 Inspection and acceptance
7.1.1 The product shall be inspected by the quality supervision department of the
supplier to ensure that the product quality complies with the provisions of this standard;
the product quality certificate shall be filled in.
7.1.2 The buyer can inspect the received products. If the test results are inconsistent
with ...
Afficher tous les détails